RJK5003DPD Description
RJK5003DPD Silicon N Channel Power MOS FET High Speed Power Switching Use REJ03G0580-0200 Rev.2.00 Mar 14, 2006.
RJK5003DPD Key Features
- VDSS : 500 V RDS(on) : 1.5 Ω (MAX.) ID : 5 A Surface mount package (MP-3A)
RJK5003DPD is Silicon N Channel Power MOS FET manufactured by Renesas.
| Part Number | Description |
|---|---|
| RJK5002DJE | High Speed Power Switching MOS FET |
| RJK5009DPP | Silicon N Channel Power MOS FET |
| RJK5012DPE | Silicon N Channel MOS FET High Speed Power Switching |
| RJK5012DPP | Silicon N-Channel MOSFET |
| RJK5013DPE | Silicon N Channel Power MOS FET |
RJK5003DPD Silicon N Channel Power MOS FET High Speed Power Switching Use REJ03G0580-0200 Rev.2.00 Mar 14, 2006.