RJK6006DPD Key Features
- Low on-state resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)
- High speed switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010
- Part: RJK6006DPD
- Description: Silicon N Channel MOS FET High Speed Power Switching
- Manufacturer: Renesas
- Size: 101.13 KB
Other RJK6006DPD Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
RJK6006DPP-A0 | Power MOSFET |
|
Renesas |
RJK6006DPP-E0 | N-Channel Power MOSFET |