RKR0703BKH
RKR0703BKH is Silicon Schottky Barrier Diode manufactured by Renesas.
Features
- Low reverse current and suitable for high efficiency rectifying.
- Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. RKR0703BKH Laser Mark S5 Package Name TURP Package Code PUSF0002ZC-A
Pin Arrangement
Cathode mark Mark 1
S5
2 1. Cathode 2. Anode
Rev.1.00 Jan 09, 2007 page 1 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Symbol VRRM VR 1 2 IO
- - IFSM
- Tj
Value 30 30 0.7 3 150
Unit V V A A °C °C
Storage temperature Tstg
- 55 to +150 Notes: 1. See from Fig.6 with Glass epoxy board. 2. Ta = 30°C, With Glass epoxy board (board size: 50mm × 50 mm, Land size 6mm × 6 mm) Short form wave (θ180°C), VR = 15 V. 3. 10 ms sine wave 1 pulse.
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF1 VF2 IR1 IR2 C Rth(j-a) Min Typ 100 200 Max 0.37 0.55 10 50 20 V µA p F °C/W Unit Test Condition IF = 100 m A IF = 700 m A VR = 5 V VR = 30 V VR = 10 V, f = 1 MHz 1 Ceramics board
- Glass epoxy board
- 2
Notes: 1. Ceramics board
2.0 0.3 2.0
50h×50w×0.8t
Unit: mm
2. Glass epoxy board
6.0 0.3 2.0
50h×50w×0.8t
Unit:...
