RQA0008NXAQS fet equivalent, silicon n-channel mos fet.
* High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz)
* Compact package capable of surface mounting
Outlin.
such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the .
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