RQA0008RXDQS Description
RQA0008RXDQS Silicon N-Channel MOS FET REJ03G1326-0100 Rev.1.00 Oct 16, 2006.
RQA0008RXDQS Key Features
- High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz)
- pact package capable of surface mounting