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RQA0008RXDQS
Silicon N-Channel MOS FET
REJ03G1326-0100 Rev.1.00 Oct 16, 2006
Features
• High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz) • Compact package capable of surface mounting
Outline
RENESAS Package code: PLZZ0004CA-A R ) (Package Name : UPAK
3
3
2
1
1
1. Gate 2. Source 3. Drain 4. Source
4
2, 4
Note:
Marking is “RX”. *UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note1: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote1 Tch Tstg Ratings 16 ±5 2.
RQA0008RXDQS Datasheet
