RQA0008NXAQS Description
RQA0008NXAQS Silicon N-Channel MOS FET REJ03G1569-0100 Rev.1.00 Jul 04, 2007.
RQA0008NXAQS Key Features
- High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz)
- pact package capable of surface mounting