RQA0009TXDQS - Silicon N-Channel MOS FET

Product Overview

Renesas Technology

Part number	RQA0009TXDQS
Manufacturer	Renesas Technology
File Size	224.36 KB
Description	Silicon N-Channel MOS FET
Datasheet	RQA0009TXDQS Datasheet
Additional preview pages of the RQA0009TXDQS datasheet.

High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz).
Compact package capable of surface mounting.
Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline.

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Published: Oct 9, 2007 |