RQA0009SXAQS Description
RQA0009SXAQS Silicon N-Channel MOS FET REJ03G1566-0100 Rev.1.00 Jul 04, 2007.
RQA0009SXAQS Key Features
- High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)
- pact package capable of surface mounting
- Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)