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RQA0009TXDQS
Silicon N-Channel MOS FET
REJ03G1520-0100 Rev.1.00 Jul 04, 2007
Features
• High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) • Compact package capable of surface mounting • Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)
Outline
RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK R )
3
3
2
1
1
4
1. Gate 2. Source 3. Drain 4. Source
2, 4
Note:
Marking is “TX”. *UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote Tch Tstg Ratings 16 ±5 3.
RQA0009TXDQS Datasheet
