JEDEC : DO-34
!Construction Silicon epitaxial planar
!Absolute maximum ratings (Ta=25°C)
Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge P Tj Tstg Limits 90 80 400 130 600 300 175.
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1SS133
Diodes
Switching diode
1SS133
!Applications High speed switching !External dimensions (Units : mm)
CATHODE BAND (YELLOW) φ0.4±0.1
!Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability.
29.0±1.0
2.7±0.3
29.0±1.0
φ1.8±0.