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2SC5511 - Transistors

Features

  • 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO=160V(Min. ), at IC=1mA) 3) High fT. (Typ. 150MHz, at VCE=10V, IE=.
  • 0.2A, f=100MHz) 4) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 14.0 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 z.

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Datasheet Details

Part number 2SC5511
Manufacturer ROHM
File Size 91.13 KB
Description Transistors
Datasheet download datasheet 2SC5511 Datasheet
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Full PDF Text Transcription

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2SC5511 Transistors www.datasheet4u.com For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A) 2SC5511 zExternal dimensions (Unit : mm) TO-220FN 10.0 zStructure NPN Silicon Epitaxial Planar Transistor 4.5 φ3.2 2.8 zFeatures 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO=160V(Min.), at IC=1mA) 3) High fT. (Typ. 150MHz, at VCE=10V, IE= −0.2A, f=100MHz) 4) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 14.0 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Power amplifier Velosity modulation zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 160 160 5 1.
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