2SC5866 transistor equivalent, medium power transistor.
1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0m, IB = 0.1A) 3) Strong discharge power for inductive.
Low frequency amplifier High speed switching
!Structure NPN Silicon epitaxial planar transistor
!Packaging specificati.
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