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Rohm Semiconductor Electronic Components Datasheet

2SD2670 Datasheet

Low frequency amplifier

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2SD2670 pdf
Transistors
Low frequency amplifier
2SD2670
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) 250mV
At lc=1.5A / lB=30mA
zExternal dimensions (Unit : mm)
Each lead has same dimensions
0.4 1.0MAX
0.85
0.7
(3)
(1) (2)
0~0.1
0.95 0.95
1.9
2.9
0.16
ROHM : TSMT3 Abbreviated symbol : XX
2SD2670
(1) Base
(2) Emitter
(3) Collector
2SD2670
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power siddipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
1 Single pulse, Pw=1ms
2 Mounted on a 25×25× t 0.8mm Ceramic substrate
Limits
Unit
15 V
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12 V
6V
3A
6 A1
500 mW
1 2 W
150 °C
55 to +150 °C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulse
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
15
12
6
270
Typ.
120
360
30
Max.
100
100
250
680
Unit
V
V
V
nA
nA
mV
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=15V
VEB=6V
IC=1.5A, IB=30mA
VCE=2V, IC=500mA
VCE=2V, IE=−500mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
Rev.A
1/2


Rohm Semiconductor Electronic Components Datasheet

2SD2670 Datasheet

Low frequency amplifier

No Preview Available !

2SD2670 pdf
Transistors
zPackaging specifications
package
Taping
Type
Code
TL
Basic ordering unit (pieces) 3000
2SD2670
2SD2670
zElectrical characteristic curves
1000
Ta=100 C
VCE=2V
Pulsed
Ta=25 C
Ta=40 C
100
10
IC/IB=20/1
VCE=2V
Pulsed
1
Ta=100 C
0.1
Ta=25 C
10
Ta=45 C
1 IC/IB=50/1
IC/IB=20/1
Ta=25 C
Pulsed
IC/IB=10/1
10
0.001
0.01 0.1
1
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. collector current
0.01
10 0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
vs. collector current
0.1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
10
Fig.3 Base-emitter saturation voltage
vs.collector current
10 1000
IC/IB=20/1
Pulsed
Ta=100 C
Ta=25 C
1
Ta=45 C
0.1 100
0.01
Ta=25 C
VCE=2V
f= 100MHz
1000
100
IC=0A
f=1MHz
Ta=25 C
Cib
Cob
0.001
0.1
1
10
BASE TO EMITTER CURRENT : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
10
0.01
0.1 1
EMITTER CURRENT : IE (A)
10
Fig.5 Gain bandwidth product
vs. emitter current
10
0.001
0.01
0.1
1
10 100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.6 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/2


Part Number 2SD2670
Description Low frequency amplifier
Maker Rohm
Total Page 3 Pages
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2SD2670 Datasheet PDF
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