B1565
B1565 is Power Transistor manufactured by ROHM.
2SB1565
Transistors
For Power Amplification (- 60V,
- 3A)
2SB1565 z Structure PNP Silicon Epitaxial Planar Transistor z External dimensions (Unit : mm)
TO-220FN
φ3.2
14.0 z Features 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain h FE. 3) Wide SOA.
(1)Base (2)Collector (3)Emitter
8.0 5.0
0.8 2.54
(1) (2) (3)
2.6 z Applications Low frequency power amplifier Stereophonic output Stabilization of power supply z Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits
- 60
- 60
- 7
- 3
- 6 2 25 150
- 55 to +150 Unit V V V A A
∗1 zplements
PNP 2SB1565 NPN 2SD2394 z Packaging specifications and h FE
Package Type h FE 2SB1565 EF Code Basic ordering unit (pieces) Taping
- 500 h FE values are classified as follows:
Item h FE E 100 to 200 F 160 to 320
Collector power dissipation Junction temperature Storage temperature
∗1 Pw=100ms, non repetitive pulse
W(Ta=25°C) W(Tc=25°C) °C °C z Electrical characteristics (Ta=25°C)
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance
∗1 Single pulse ∗2 h FE rank
Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) h FE f T...
