BA12003B - Darlinton Transistor Array

Product Overview

Rohm

Datasheet Details

Part number	BA12003B
Manufacturer	ROHM
File Size	0.96 MB
Description	Darlinton Transistor Array
Datasheet	BA12003B Datasheet
Additional preview pages of the BA12003B datasheet.

Product details

Description

BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode.

Features

Built-in 7 circuits.
High output break down voltage.
High DC output current gain.
Built-in input resistor to limit base current.
Built-in output surge absorption clamp diode Key Specifications.
Output break down voltage： VCE=60V(max).
Output current： Io=500mA/ch(max).
Operating supply voltage range： -0.5V to +30V.
Operating temperature range： -40°C to +85°C.
DC current gain： hfe=1000(min).
Input resistor： BA12003B/BF Rin=2.7kΩ.

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Published: Apr 1, 2005 |