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BA12003DF-Z - Darlington Transistor Array

General Description

BA12003DF-Z, BA12004DF-Z are darlington transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode.

Key Features

  • Built-in 7 circuits.
  • High output break down voltage.
  • High DC output current gain.
  • Built-in input resistor to limit base current.
  • Built-in output surge absorption clamp diode.

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Datasheet Details

Part number BA12003DF-Z
Manufacturer ROHM
File Size 1.55 MB
Description Darlington Transistor Array
Datasheet download datasheet BA12003DF-Z Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet 7 Circuits Darlington Transistor Array BA12003DF-Z BA12004DF-Z General Description BA12003DF-Z, BA12004DF-Z are darlington transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. Features ■ Built-in 7 circuits ■ High output break down voltage ■ High DC output current gain ■ Built-in input resistor to limit base current ■ Built-in output surge absorption clamp diode Applications ■ Motor Drivers ■ LED Drivers ■ Solenoid Drivers ■ Low Side Switch Key Specifications ■ Output break down voltage: VCE=60V(max) ■ Output current: Io=500mA/ch(max) ■ Operating supply voltage range: -0.5V to +30V ■ Operating temperature range: -40°C to +85°C ■ DC current gain: hfe=1000(min) ■ Input resistor: BA12003DF-Z Rin=2.