Part BA12003BF
Description Darlinton Transistor Array
Category Transistor
Manufacturer ROHM
Size 0.96 MB
ROHM
BA12003BF

Overview

BA12003B/BF,BA12004B/BFare darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode.

  • Built-in 7 circuits
  • High output break down voltage
  • High DC output current gain
  • Built-in input resistor to limit base current
  • Built-in output surge absorption clamp diode Key Specifications
  • Output break down voltage: VCE=60V(max)
  • Output current: Io=500mA/ch(max)
  • Operating supply voltage range: -0.5V to +30V
  • Operating temperature range: -40°C to +85°C
  • DC current gain: hfe=1000(min)