• Part: R6012FNX
  • Description: Drive Nch MOSFET
  • Category: MOSFET
  • Manufacturer: ROHM
  • Size: 1.34 MB
Download R6012FNX Datasheet PDF
ROHM
R6012FNX
R6012FNX is Drive Nch MOSFET manufactured by ROHM.
Features 1) Fast reverse recovery time (trr) 0.8 2.54 (1) (2) (3) - Application Switching - Inner circuit - Packaging specifications Type R6012FNX Package Code Basic ordering unit (pieces) Bulk 500  ∗1 .Data Sheet.co.kr (1) (2) (3) (1) Gate (2) Drain (3) Source 1 BODY DIODE - Absolute maximum ratings (Ta  25°C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Power dissipation (Tc=25C) Channel temperature Range of storage temperature - 1 Pw10s, Duty cycle1% - 2 L≒ 500H, VDD=50V, Rg=25 ,starting Tch=25°C - 3 Limited only by maximum temperature allowed. Limits 600 30 Unit V V A A A A A m J W C C VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg - 3 - 1 - 3 - 1 - 2 - 2 12 48 12 48 6 9.6 50 150 - 55 to 150 - Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 2.5 Unit C / W .rohm. © 2011 ROHM Co., Ltd. All rights...