R6012FNX
R6012FNX is Drive Nch MOSFET manufactured by ROHM.
Features
1) Fast reverse recovery time (trr)
0.8 2.54
(1) (2) (3)
- Application Switching
- Inner circuit
- Packaging specifications Type R6012FNX Package Code Basic ordering unit (pieces) Bulk 500
∗1
.Data Sheet.co.kr
(1)
(2)
(3)
(1) Gate (2) Drain (3) Source
1 BODY DIODE
- Absolute maximum ratings (Ta 25°C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Power dissipation (Tc=25C) Channel temperature Range of storage temperature
- 1 Pw10s, Duty cycle1%
- 2 L≒ 500H, VDD=50V, Rg=25 ,starting Tch=25°C
- 3 Limited only by maximum temperature allowed.
Limits 600 30
Unit V V A A A A A m J W C C
VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg
- 3
- 1
- 3
- 1
- 2
- 2
12 48 12 48 6 9.6 50 150
- 55 to 150
- Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 2.5 Unit C / W
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