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Rohm Semiconductor Electronic Components Datasheet

R6012FNX Datasheet

Drive Nch MOSFET

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R6012FNX pdf
Data Sheet
10V Drive Nch MOSFET
R6012FNX
Structure
Silicon N-channel MOSFET
Features
1) Fast reverse recovery time (trr)
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage
  VGSS garanteed to be ±30V .
5) Drive circuits can be simple.
6) Parallel use is easy.
Dimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5
2.8
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
Application
Switching
Inner circuit
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
R6012FNX
Bulk
-
500
www.DataSheet.co.kr
Absolute maximum ratings (Ta 25°C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Power dissipation (Tc=25C)
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD
Tch
Tstg
600
30
12
48
12
48
6
9.6
50
150
55 to 150
*1 Pw10s, Duty cycle1%
*2 L500H, VDD=50V, Rg=25,starting Tch=25°C
*3 Limited only by maximum temperature allowed.
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
2.5
Unit
C / W
(1) Gate
(2) Drain
(3) Source
1
(1) (2) (3)
1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/


Rohm Semiconductor Electronic Components Datasheet

R6012FNX Datasheet

Drive Nch MOSFET

No Preview Available !

R6012FNX pdf
R6012FNX
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
RDS (on*)
Forward transfer admittance
l Yfs l*
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on) *
Rise time
tr *
Turn-off delay time
td(off) *
Fall time
tf *
Total gate charge
Qg *
Gate-source charge
Qgs *
Gate-drain charge
Qgd *
*Pulsed
Min.
-
600
-
3
-
3.5
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
0.39
-
1300
890
45
30
37
77
20
35
10
15
Max.
100
-
100
5
0.51
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
nA VGS=±30V, VDS=0V
V ID=1mA, VGS=0V
A VDS=600V, VGS=0V
V VDS=10V, ID=1mA
ID=6A, VGS=10V
S ID=6A, VDS=10V
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns ID=6A, VDD 300V
ns VGS=10V
ns RL=50
ns RG=10
nC ID=12A,
nC VDD 300V
nC VGS=10V
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol Min.
Typ.
Forward Voltage
Reverse Recovery Time
VSD *
trr *
-
45
-
75
*Pulsed
Max.
1.5
105
Unit
V
ns
Conditions
Is=12A, VGS=0V
Is=12A, di/dt=100A/s
www.DataSheet.co.kr
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/


Part Number R6012FNX
Description Drive Nch MOSFET
Maker Rohm
Total Page 7 Pages
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R6012FNX pdf
R6012FNX Datasheet PDF
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