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Rohm Semiconductor Electronic Components Datasheet

R6020ANJ Datasheet

Drive Nch MOSFET

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R6020ANJ
  Nch 600V 20A Power MOSFET
   Datasheet
VDSS
600V
lOutline
TO-263
 
RDS(on)(Max.)
0.25Ω
SC-83
ID
±20A
LPT(S)
PD
304W
 
      
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to
be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Basic ordering unit (pcs)
24
1000
Taping code
TL
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6020ANJ
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±20 A
Pulsed drain current
IDP*2 ±80 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*3 10 A
Avalanche energy, single pulse
EAS*3
26.7 mJ
Power dissipation (Tc = 25°C)
PD 304 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
20160909 - Rev.003    


Rohm Semiconductor Electronic Components Datasheet

R6020ANJ Datasheet

Drive Nch MOSFET

No Preview Available !

R6020ANJ
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 0.41 /W
- - 80 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±30V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 10A
RDS(on)*4 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
   
- 0.1 100 μA
---
- - ±100 nA
2.5 - 4.5 V
   
- 0.19 0.25 Ω
- 0.37 -
- 13.4 - Ω
                                                                                         
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/11
20160909 - Rev.003


Part Number R6020ANJ
Description Drive Nch MOSFET
Maker Rohm
Total Page 13 Pages
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