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Rohm Semiconductor Electronic Components Datasheet

R6025ANZ Datasheet

Nch 600V 25A Power MOSFET

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R6025ANZ
  Nch 600V 25A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
600V
0.15Ω
±25A
150W
lOutline
TO-3PF
 
 
      
      
 
 
 
      
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to
be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Tube
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
-
360
Taping code
C8
Marking
R6025ANZ
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
TC = 25°C
TC = 100°C
VDSS
ID*1
ID*1
ID,pulse*2
VGSS
EAS*3
EAR*4
IAR*3
PD
Tj
Tstg
dv/dt
600
±25
±12.5
±100
±30
39
9.7
12.5
150
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
V/ns
                                                                                        
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/13
20140205 - Rev.001    


Rohm Semiconductor Electronic Components Datasheet

R6025ANZ Datasheet

Nch 600V 25A Power MOSFET

No Preview Available !

R6025ANZ
          
lAbsolute maximum ratings
Parameter
Drain - Source voltage slope
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
Symbol
dv/dt
Conditions
Values Unit
VDS = 480V, ID = 25A
50 V/ns
Tj = 125
                    
Symbol
RthJC
RthJA
Tsold
Values
Unit
Min. Typ. Max.
- - 0.83 /W
- - 40 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
Drain - Source avalanche
breakdown voltage
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate input resistance
V(BR)DSS VGS = 0V, ID = 1mA
V(BR)DS VGS = 0V, ID = 12.5A
VDS = 600V, VGS = 0V
IDSS Tj = 25°C
Tj = 125°C
IGSS VGS = ±30V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 12.5A
RDS(on)*6 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
- 700 -
V
   
- 0.1 100 μA
- - 1000
- - ±100 nA
2.5 - 4.5 V
   
- 0.12 0.15 Ω
- 0.24 -
- 2.2 - Ω
                                                                                         
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/13
20140205 - Rev.001


Part Number R6025ANZ
Description Nch 600V 25A Power MOSFET
Maker Rohm
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