Datasheet4U Logo Datasheet4U.com

RFN10T2D - Super Fast Recovery Diode

Key Features

  • 1)Cathode common Dual type. (TO-220) 2)Low VF 3)Low switching loss.
  • Construction Silicon epitaxial planer.
  • Dimensions (Unit : mm) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 15.0±0.4 　 0.2 8.0 8.0±0.2 12.0±0.2 RFN10 T2D ① 1.2 ① 5.0±0.2 14.0±0.5 13.5MIN 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 ROHM : TO220FN ① dot (year week factory) 2.6±0.5.
  • Structure.
  • Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage VRM VR Averag.

📥 Download Datasheet

Datasheet Details

Part number RFN10T2D
Manufacturer ROHM
File Size 428.98 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFN10T2D Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RFN6BM2D Ultrafast Rectifier INCHANGE
RFNL5TJ6S Ultrafast Rectifier INCHANGE

Other Datasheets by ROHM

Part Number Description
RFN10TF6S Super Fast Recovery Diode
RFN10BM3S Super Fast Recovery Diode
RFN10BM3SFH Super Fast Recovery Diode
RFN10BM6S Super Fast Recovery Diode
RFN10BM6SFH Super Fast Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification Features 1)Cathode common Dual type. (TO-220) 2)Low VF 3)Low switching loss Construction Silicon epitaxial planer Dimensions (Unit : mm) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 15.0±0.4 　 0.2 8.0 8.0±0.2 12.0±0.2 RFN10 T2D ① 1.2 ① 5.0±0.2 14.0±0.5 13.5MIN 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 ROHM : TO220FN ① dot (year week factory) 2.6±0.5 Structure Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage VRM VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≤0.