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RFUS10TF4S - Super Fast Recovery Diode

Features

  • 1)Single type. (TO-220) 2)High switching speed RFUS10 TF4S ①② Data Sheet lStructure lConstruction Silicon epitaxial planer ROHM : TO220NFM ① Manufacture Year ② Manufacture Week lAbsolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current VRM VR Io Forward current surge peak IFSM Junction temperature Storage temperature Tj Tstg Conditions Duty≤0.5 60Hz half sin wave, Resistance load, Tc=82°C 60Hz half sin wave,.

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Datasheet Details

Part number RFUS10TF4S
Manufacturer ROHM
File Size 462.83 KB
Description Super Fast Recovery Diode
Datasheet download datasheet RFUS10TF4S Datasheet

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Full PDF Text Transcription

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Super Fast Recovery Diode RFUS10TF4S lSeries Standard Fast Recovery lDimensions (Unit : mm) lApplications General rectification lFeatures 1)Single type.(TO-220) 2)High switching speed RFUS10 TF4S ①② Data Sheet lStructure lConstruction Silicon epitaxial planer ROHM : TO220NFM ① Manufacture Year ② Manufacture Week lAbsolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current VRM VR Io Forward current surge peak IFSM Junction temperature Storage temperature Tj Tstg Conditions Duty≤0.
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