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SCS210KGHR - SiC Schottky Barrier Diode

Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer schottky diode lAEC-Q101 Qualified TO-220AC (1) Data Sheet lInner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 50 C SCS210KG lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Unit Reverse voltage.

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Datasheet Details

Part number SCS210KGHR
Manufacturer ROHM
File Size 535.72 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS210KGHR Datasheet
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Full PDF Text Transcription

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SCS210KGHR SiC Schottky Barrier Diode VR 1200V IF 10A QC 34nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer schottky diode lAEC-Q101 Qualified TO-220AC (1) Data Sheet lInner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 50 C SCS210KG lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Unit Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Total power disspation VRM 1200 V VR 1200 V IF 10*1 A 45*2 A IFSM 190*3 A 33*4 A
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