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SCS212AGHR
SiC Schottky Barrier Diode
VR 650V IF 12A QC 18nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lConstruction Silicon carbide epitaxial planer Schottky diode
lAEC-Q101 Qualified
TO-220AC
(1)
Data Sheet
lInner circuit
(2) (3)
(1)
(1) Cathode (2) Cathode (3) Anode
(2) (3)
lPackaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Tube 50 C
SCS212AG
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current Total power disspation
VRM 650 V
VR 650 V
IF
12*1
A
45*2
A
IFSM 170*3 A
36*4
A
IFRM
SCS212AGHR Datasheet
