SCS215AJ
SCS215AJ is SiC Schottky Barrier Diode manufactured by ROHM.
Si C Schottky Barrier Diode l Outline
Data Sheet
VR IF QC l Features 1) Shorter recovery time
650V 15A 23n C
LPT(L) <TO-263AB>
(1)
(2)
(3) (4) l Inner circuit
(1)
2) Reduced temperature dependence 3) High-speed switching possible
(1) Cathode (2) N / C (3) Cathode (4) Anode
(2) (3) (4) l Packaging specifications Packaging l Construction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking l Absolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 15- 55- Surge no repetitive forward current IFSM
1 2 3
Embossed tape
Reel size (mm) Tape width (mm)
330 24 1,000 TLL SCS215AJ
Unit V V A A A A A W °C °C
200- 43-
Repetitive peak forward current Total power dissipation Junction temperature Range of storage temperature
IFRM PD Tj Tstg
56- 5 100- 175 -55 to +175
- 1 Tc=120°C
- 2 PW=8.3ms sinusoidal, Tj=25°C
- 3 PW=10ms square, Tj=25°C
- 4 PW=8.3ms sinusoidal, Tj=150°C
- 5 Tc=100°C, Tj=150°C, Duty cycle=10%
- 6 Tc=25°C
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1/5
- Rev.A
SCS215AJ l Electrical characteristics (Tj = 25°C) Values Parameter DC blocking voltage Symbol VDC Conditions Min. IR =0.3m A IF=15A,Tj=25°C Forward voltage VF IF=15A,Tj=150°C IF=15A,Tj=175°C VR=600V,Tj=25°C Reverse current IR VR=600V,Tj=150°C VR=600V,Tj=175°C VR=1V,f=1MHz Total capacitance Total capacitive charge Switching time C VR=600V,f=1MHz Qc tc
VR=400V,di/dt=350A/ms VR=400V,di/dt=350A/ms
Data Sheet
Unit Typ. 1.35 1.55 1.63 3 45 105 550 56 23 18 Max. 1.55 300 V V V V m A m A m A p F p F n C ns 600
- l Thermal characteristics Parameter Thermal resistance Symbol Rth(j-c) Conditions Min. Typ. 1.2 Max. 1.5 Unit °C/W
.rohm. © 2014 ROHM Co., Ltd. All rights...
