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SCS215AJ - SiC Schottky Barrier Diode

Key Features

  • 1) Shorter recovery time 650V 15A 23nC LPT(L) (1) (2) (3) (4) lInner circuit (1) 2) Reduced temperature dependence 3) High-speed switching possible (1) Cathode (2) N / C (3) Cathode (4) Anode (2) (3) (4) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward curre.

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Datasheet Details

Part number SCS215AJ
Manufacturer ROHM
File Size 453.98 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS215AJ Datasheet

Full PDF Text Transcription for SCS215AJ (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SCS215AJ. For precise diagrams, and layout, please refer to the original PDF.

SCS215AJ SiC Schottky Barrier Diode lOutline Data Sheet VR IF QC lFeatures 1) Shorter recovery time 650V 15A 23nC LPT(L) <TO-263AB> (1) (2) (3) (4) lInner circuit (1) 2) ...

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650V 15A 23nC LPT(L) <TO-263AB> (1) (2) (3) (4) lInner circuit (1) 2) Reduced temperature dependence 3) High-speed switching possible (1) Cathode (2) N / C (3) Cathode (4) Anode (2) (3) (4) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 15* 55* Surge no repetitive forward current IFSM 1 2 3 Embossed tape Reel size (mm) Tape width (mm) 330 24 1,000 TLL SCS215AJ Unit