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SCS215AE - SiC Schottky Barrier Diode

Key Features

  • 1) Shorter recovery time 650V 15A 23nC TO-247 (1) (2) (3) lInner circuit 2) Reduced temperature dependence 3) High-speed switching possible (1) N/C (2) Cathode (3) Anode (1) (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 1.

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Datasheet Details

Part number SCS215AE
Manufacturer ROHM
File Size 445.27 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS215AE Datasheet

Full PDF Text Transcription for SCS215AE (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SCS215AE. For precise diagrams, and layout, please refer to the original PDF.

SCS215AE SiC Schottky Barrier Diode lOutline Data Sheet VR IF QC lFeatures 1) Shorter recovery time 650V 15A 23nC TO-247 (1) (2) (3) lInner circuit 2) Reduced temperature...

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650V 15A 23nC TO-247 (1) (2) (3) lInner circuit 2) Reduced temperature dependence 3) High-speed switching possible (1) N/C (2) Cathode (3) Anode (1) (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 15* 55* Surge no repetitive forward current IFSM 1 2 3 Tube 30 C SCS215AE Reel size (mm) Tape width (mm) Unit V V A A A A A W °C °C 200* 43* 4 Repetitive peak forw