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SCS215AG - SiC Schottky Barrier Diode

Key Features

  • 1) Shorter recovery time 650V 15A 23nC TO-220AC (1) (2) (3) lInner circuit (1) 2) Reduced temperature dependence 3) High-speed switching possible (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer type Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 15.

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Datasheet Details

Part number SCS215AG
Manufacturer ROHM
File Size 222.74 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS215AG Datasheet

Full PDF Text Transcription for SCS215AG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SCS215AG. For precise diagrams, and layout, please refer to the original PDF.

SCS215AG SiC Schottky Barrier Diode lOutline Datasheet VR IF QC lFeatures 1) Shorter recovery time 650V 15A 23nC TO-220AC (1) (2) (3) lInner circuit (1) 2) Reduced temper...

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50V 15A 23nC TO-220AC (1) (2) (3) lInner circuit (1) 2) Reduced temperature dependence 3) High-speed switching possible (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer type Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 15* 55* Surge no repetitive forward current IFSM 1 2 3 Tube 50 C SCS215AG Reel size (mm) Tape width (mm) Unit V V A A A A A W °C °C 200* 43* 4 5 6 Repetitive peak forwa