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SCS210AJ - SiC Schottky Barrier Diode

Key Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible.

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Datasheet Details

Part number SCS210AJ
Manufacturer ROHM
File Size 2.44 MB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS210AJ Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SCS210AJ SiC Schottky Barrier Diode VR 650V IF 10A QC 15nC Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible Applications PFC Boost Topology Secondary Side Rectification Data Center PV Power Conditioners Outline LPT(L) Datasheet (1) (2) (3) (4) Inner circuit (1) (1) Cathode (2) N / C (3) Cathode (4) Anode (2) (3) (4) Packaging specifications Packaging Embossed tape Reel size (mm) 330 Tape width (mm) Type Basic ordering unit (pcs) 24 1 000 Packing code TLL Marking SCS210AJ Absolute maximum ratings (Tj = 25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Continuous forward current (Tc= 137°C) IF Surge nonrepetitive forward current PW=10ms sinusoidal, Tj=25°C PW=10ms