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SCS210KGHR
SiC Schottky Barrier Diode
VR 1200V IF 10A QC 34nC
lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible
lConstruction Silicon carbide epitaxial planer schottky diode
lAEC-Q101 Qualified
TO-220AC
(1)
Data Sheet
lInner circuit
(2) (3)
(1)
(1) Cathode (2) Cathode (3) Anode
(2) (3)
lPackaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Taping code
Marking
Tube 50 C
SCS210KG
lAbsolute maximum ratings (Tj = 25°C) Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current Total power disspation
VRM 1200 V
VR
1200
V
IF
10*1
A
45*2
A
IFSM 190*3 A
33*4
A
SCS210KGHR Datasheet
