* 1) Compact (φ3.1 mm). 2) High efficiency, high output PO = 8.4 mW (IF = 50 mA). 3) Wide radiation angie θ1 / 2 = ±16deg. 4) Peak wavelength well suited to silicon detectors (λP = 940 nm). 5) Good current-optical output linearity. 6) Long life, high reliability. 7) Low cost, clear epoxy resin package
SIR-341ST3F Datasheet (63.39 KB)
SIR-341ST3F
63.39 KB
Infrared light emitting diode.
Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. Thi.
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