* 1) High efficiency, high output PO = 11.0 mW (IF = 50 mA). 2) Wide radiation angle θ 1 / 2 = 15deg. 3) Emission spectrum well suited to silicon detectors (λP = 940 nm). 4) Good current-optical output linearity. 5) Long life, high reliability. 6) Low cost, clear epoxy resin package. FAbsolute maximu
SIR-563ST3F Datasheet (53.66 KB)
SIR-563ST3F
53.66 KB
Infrared light emitting diode.
Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. Thi.
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