SIR-563ST3F diode equivalent, infrared light emitting diode.
1) High efficiency, high output PO = 11.0 mW (IF = 50 mA). 2) Wide radiation angle θ 1 / 2 = 15deg. 3) Emission spectrum well suited to silicon detectors (λP = 940 nm). 4.
Optical control equipment Light source for remote control devices
FExternal dimensions (Units: mm)
FFeatures 1) High e.
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