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ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
e-mail: office@roithner-laser.com http://www.roithner-laser.com
RLT8340MG TECHNICAL DATA
High Power Infrared Laserdiode
Structure: AlGaAs double heterostructure Lasing wavelength: 830 nm typ. Max. optical power: 40 mW, single mode Package: 5.6 mm
PIN CONNECTION:
1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode
NOTE!
LASERDIODE MUST BE COOLED!
Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power LD Reverse Voltage PD Reverse Voltage Operating Temperature Storage Temperature
Po VR(LD) VR(PD)
Top Tstg
RATING 40 2 30
-10 .. +50 -40 ..
RLT8340MG Datasheet
