Click to expand full text
RLT83500G
TECHNICAL DATA
High Power Infrared Laser Diode
Lasing wavelength: 830 nm typ. Max. optical power: 500 mW, cw Emitting Aperture: 1x50 μm² Package: 9 mm
PIN CONNECTION:
1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode
Specification (Tc = 25°C)
CHARACTERISTIC
Optical Output Power Threshold Current Operation Current Operation Voltage Slope Efficiency Series Resistance Central Wavelength Spectral Width Wavelength Temperature Coefficient Beam Divergence Beam Divergence Monitor Current Polarization Reverse Voltage Operating Temperature Storage Temperature
MIN 0.5 ≤0.25 ≤0.95 ≤2.1 ≥0.80 0.80 830 ±10 ≤3 0.3 10 40 400 – 1000 TE 2.0 10 - 30 -10 – 70
03.08.2010
rlt83500g.
RLT83500G Datasheet
