RU1Z120R3 Datasheet N-Channel MOSFET

Manufacturer: Ruichips

Overview: RU1Z120R3 N-Channel Advanced Power MOSFET.

RU1Z120R3 n-channel mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU1Z120R3
Manufacturer	Ruichips
File Size	451.06 KB
Description	N-Channel MOSFET
Download	RU1Z120R3 Download (PDF)

General Description

Insulation Slug SDG TO220S D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 150 ±25 175 -55 to 175 120 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480 A 120 A 85 375 W 188 0.4 °C/W 62.5 °C/W 552 mJ Ruichips Semiconductor Co., Ltd Rev.

B– AUG., 2015 1 www.ruichips.com RU1Z120R3 Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU1Z120R3 Min.

Typ.

Key Features

150V/120A RDS (ON) =11mΩ(Typ. )@VGS=10V.
Insulation Slug(VISO≥1500VAC).
Reliable and Rugged.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

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