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RU2013H Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU2013H
Manufacturer Ruichips
File Size 279.35 KB
Description N-Channel Advanced Power MOSFET
Download RU2013H Download (PDF)

General Description

SOP-8 Applications • DC/DC Converters Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 20 ±12 150 -55 to 150 4.5 ① 50 13 10 3.1 2 40 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

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Key Features

  • 20V/13A, RDS (ON) =13mΩ (Typ. ) @ VGS=10V RDS (ON) =16mΩ (Typ. ) @ VGS=4.5V RDS (ON) =22mΩ (Typ. ) @ VGS=2.5V.
  • Super High Dense Cell Design.
  • Low On-Resistance.
  • Reliable and Rugged.
  • Lead Free and Green Available Pin.

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