RU3040M2 mosfet equivalent, n-channel advanced power mosfet.
* 30V/40A,
RDS (ON) =5.8mΩ(Typ.)@VGS=10V RDS (ON) =8.2mΩ(Typ.)@VGS=4.5V RDS (ON) =16.8mΩ(Typ.) @VGS=2.5V
* Super High Dense Cell Design
* Fast Switching Speed.
* Switching Application Systems
Pin Description
D D DD
SSS G PIN1
PDFN3333
D
PIN1
G
Absolute Maximum Ratings
S.
D D DD
SSS G PIN1
PDFN3333
D
PIN1
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Ra.
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