RU3041M2 Description
D D DD SSS G PIN1 PDFN3333 D PIN1 G Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current.
RU3041M2 Key Features
- 30V/40A, RDS (ON) =4.2mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=4.5V RDS (ON) =10mΩ(Typ.)@VGS=2.5V
- Super High Dense Cell Design
- Fast Switching Speed
- Low gate Charge
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)