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RU3040M2 Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU3040M2
Manufacturer Ruichips
File Size 321.58 KB
Description N-Channel Advanced Power MOSFET
Download RU3040M2 Download (PDF)

General Description

D D DD SSS G PIN1 PDFN3333 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ Maximum Power Dissipation@TC PD ③ Maximum Power Dissipation@TA S N-Channel MOSFET Rating Unit TC=25°C 30 ±10 150 -55 to 150 40 V °C °C A TC=25°C 160 A TC=25°C 40 TC=100°C 25 A TA=25°C 13 TA=70°C 11 TC=25°C 31 TC=100°C 13 W TA=25°C 3.5 TA=70°C 2.3 Ruichips Semiconductor Co., Ltd Rev.

A– JUL., 2013 1 www.ruichips.com RU3040M2 Symbol Parameter Rating Unit RθJC ③ RθJA Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient 4 35 Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed 90 Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU3040M2 Min.

Typ.

Overview

RU3040M2 N-Channel Advanced Power MOSFET.

Key Features

  • 30V/40A, RDS (ON) =5.8mΩ(Typ. )@VGS=10V RDS (ON) =8.2mΩ(Typ. )@VGS=4.5V RDS (ON) =16.8mΩ(Typ. ) @VGS=2.5V.
  • Super High Dense Cell Design.
  • Fast Switching Speed.
  • Low gate Charge.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).