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RU3041M2 Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU3041M2
Manufacturer Ruichips
File Size 406.08 KB
Description N-Channel Advanced Power MOSFET
Download RU3041M2 Download (PDF)

General Description

D D DD SSS G PIN1 PDFN3333 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA③ S N-Channel MOSFET Rating Unit TC=25°C 30 ±10 150 -55 to 150 40 V °C °C A TC=25°C 160 A TC=2

Overview

RU3041M2 N-Channel Advanced Power MOSFET.

Key Features

  • 30V/40A, RDS (ON) =4.2mΩ(Typ. )@VGS=10V RDS (ON) =5.5mΩ(Typ. )@VGS=4.5V RDS (ON) =10mΩ(Typ. )@VGS=2.5V.
  • Super High Dense Cell Design.
  • Fast Switching Speed.
  • Low gate Charge.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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