RU3075L Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU3075L n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU3075L
Manufacturer	Ruichips
File Size	347.29 KB
Description	N-Channel Advanced Power MOSFET
Download	RU3075L Download (PDF)

General Description

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.

A– NOV., 2016 1 S N-Channel MOSFET Rating Unit TC=25°C 30 ±20 175

Overview

RU3075L N-Channel Advanced Power MOSFET.

Key Features

30V/75A, RDS (ON) =4.5mΩ(Typ. )@VGS=10V RDS (ON) =7mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

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