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RU30C8H - N-Channel Advanced Power MOSFET

Description

D2 D2 D1 D1 G2 S2 G1 pin1 S1 SOP-8 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current

Features

  • N-Channel 30V/8A, RDS (ON) =12mΩ(Typ. ) @ VGS=10V RDS (ON) =16mΩ(Typ. ) @ VGS=4.5V.
  • P-Channel -30V/-7A, RDS (ON) =18mΩ (Typ. ) @ VGS=-10V RDS (ON) =25mΩ (Typ. ) @ VGS=-4.5V.
  • Reliable and Rugged.
  • ESD Protected.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet preview – RU30C8H

Datasheet Details

Part number RU30C8H
Manufacturer Ruichips
File Size 310.22 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU30C8H Datasheet
Additional preview pages of the RU30C8H datasheet.

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Full PDF Text Transcription

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RU30C8H Complementary Advanced Power MOSFET Features • N-Channel 30V/8A, RDS (ON) =12mΩ(Typ.) @ VGS=10V RDS (ON) =16mΩ(Typ.) @ VGS=4.5V • P-Channel -30V/-7A, RDS (ON) =18mΩ (Typ.) @ VGS=-10V RDS (ON) =25mΩ (Typ.) @ VGS=-4.
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