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RU30D8H Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU30D8H
Manufacturer Ruichips
File Size 263.28 KB
Description N-Channel Advanced Power MOSFET
Download RU30D8H Download (PDF)

General Description

SOP-8 Applications • SMPS Absolute Maximum Ratings Dual N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating 30 ±20 150 -55 to 150 2.5 ① 28 7 5.6 2 1.3 62.5 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– MAY., 2011 www.ruichips.com RU30D8H Electrical Characterist

Overview

RU30D8H N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 30V/7A, RDS (ON) =18mΩ (Typ. ) @ VGS=10V RDS (ON) =45mΩ (Typ. ) @ VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Available Pin.

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