RU30J30M - Dual N-Channel Advanced Power MOSFET

Product Overview

Ruichips

Datasheet Details

Part number	RU30J30M
Manufacturer	Ruichips
File Size	413.75 KB
Description	Dual N-Channel Advanced Power MOSFET
Datasheet	RU30J30M Datasheet
Additional preview pages of the RU30J30M datasheet.

Product details

Description

G2S2 S2 S2 G1D1D1D1 PDFN5 6 PIN1 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=4.5V) ID② Continuous Drain Current@TA(VGS=4.5V)③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA③ S

Features

30V/30A, RDS (ON) =7mΩ(Typ. )@VGS=10V RDS (ON) =9.5mΩ(Typ. )@VGS=4.5V.
Fast Switching Speed.
Low gate Charge.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

📁 Similar Datasheet

RU30 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU3060L - N-Channel MOSFET (VBsemi)
RU30A - Fast-Recovery Rectifier Diodes (Sanken electric)
RU30E4B - N-Channel MOSFET (VBsemi)
RU30Z - Fast-Recovery Rectifier Diodes (Sanken electric)
RU3 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU3 - FAST RECOVERY RECTIFIER DIODES (EIC)
RU3 - Silicon And Fast Recovery Rectifiers (WEJ)

Other Datasheets by Ruichips

RU30J30M2 - Dual N-Channel Advanced Power MOSFET
RU30100L - N-Channel Advanced Power MOSFET
RU30100R - N-Channel Advanced Power MOSFET
RU30105L - N-Channel Advanced Power MOSFET
RU30105R - N-Channel Advanced Power MOSFET
RU30106L - N-Channel Advanced Power MOSFET

Published: Jan 8, 2019 |