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RU30S4H Datasheet P-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU30S4H
Manufacturer Ruichips
File Size 287.69 KB
Description P-Channel Advanced Power MOSFET
Download RU30S4H Download (PDF)

General Description

SOP-8 Applications • Power Management.

Absolute Maximum Ratings Dual P-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=-10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C Thermal Resistance-Junction to Ambient Rating -30 ±20 150 -55 to 150 -2.5 ① -18 -4.8 -3.8 2 1.3 62.5 Unit V °C °C A A A W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev.

B– FEB., 2012 www.ruichips.com RU30S

Overview

RU30S4H P-Channel Advanced Power MOSFET MOSFET.

Key Features

  • -30V/-4.8A, RDS (ON) =50mΩ (Typ. ) @ VGS=-10V RDS (ON) =80mΩ (Typ. ) @ VGS=-4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Available Pin.

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