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RU30S15H Datasheet P-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU30S15H P-Channel Advanced Power MOSFET.

Datasheet Details

Part number RU30S15H
Manufacturer Ruichips
File Size 384.86 KB
Description P-Channel Advanced Power MOSFET
Download RU30S15H Download (PDF)

General Description

D2 D2 D1 D1 G2 S2 G1 pin1 S1 SOP-8 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA③ Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed Shenzhen City Ruichips Semiconductor Co., Ltd Rev.

A

Key Features

  • -30V/-15A, RDS (ON) =15mΩ(Typ. )@VGS=-10V RDS (ON) =22mΩ(Typ. )@VGS=-4.5V.
  • Low On-Resistance.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).