RU30S4H
RU30S4H is P-Channel Advanced Power MOSFET manufactured by Ruichips.
Features
- -30V/-4.8A, RDS (ON) =50mΩ (Typ.) @ VGS=-10V RDS (ON) =80mΩ (Typ.) @ VGS=-4.5V
- Super High Dense Cell Design
- Reliable and Rugged
- Lead Free and Green Available
Pin Description
SOP-8
Applications
- Power Management.
Absolute Maximum Ratings
Dual P-Channel MOSFET
Symbol
Parameter mon Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
TA=25°C
②
RθJA
Continuous Drain Current(VGS=-10V)
TA=25°C TA=70°C
Maximum Power Dissipation
TA=25°C TA=70°C
Thermal Resistance-Junction to Ambient
Rating
-30 ±20 150 -55 to 150 -2.5
①
-18 -4.8 -3.8 2 1.3 62.5
Unit
V °C °C...
