Datasheet4U Logo Datasheet4U.com

RU3560L Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

📥 Download Datasheet

Datasheet Details

Part number RU3560L
Manufacturer Ruichips
File Size 295.37 KB
Description N-Channel Advanced Power MOSFET
Download RU3560L Download (PDF)

General Description

TO252 Applications • Low Voltage Inverter Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

Dâ€

Key Features

  • 40V/50A, RDS (ON) =13mΩ(Typ. )@VGS=10V RDS (ON) =18mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Fast Switching and Fully Avalanche Rated.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

More Datasheets from Ruichips

Part Number Description
RU3568L N-Channel Advanced Power MOSFET
RU3568R N-Channel Advanced Power MOSFET
RU35122R N-Channel Advanced Power MOSFET
RU35122S N-Channel Advanced Power MOSFET
RU3520H N-Channel Advanced Power MOSFET
RU3582R N-Channel Advanced Power MOSFET
RU3582S N-Channel Advanced Power MOSFET
RU30100L N-Channel Advanced Power MOSFET
RU30100R N-Channel Advanced Power MOSFET
RU30105L N-Channel Advanced Power MOSFET