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RU3568L Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU3568L
Manufacturer Ruichips
File Size 314.15 KB
Description N-Channel Advanced Power MOSFET
Download RU3568L Download (PDF)

General Description

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 30 ±20 175 -55 to 175 60 V °C °C A TC=25°C TC=25°C TC=10

Overview

RU3568L N-Channel Advanced Power MOSFET.

Key Features

  • 30V/60A, RDS (ON) =6mΩ(Typ. )@VGS=10V RDS (ON) =10mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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