RU40191S Key Features
- 40V/190A, RDS (ON) =1.8mΩ(Typ.)@VGS=10V
- Super High Dense Cell Design
- Ultra Low On-Resistance
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)
- Part: RU40191S
- Manufacturer: Ruichips
- Size: 629.49 KB
Related Ruichips Datasheets
| Part Number | Description |
|---|---|
| RU40190Q2 | N-Channel Advanced Power MOSFET |
| RU40190R | N-Channel Advanced Power MOSFET |
| RU40190S | N-Channel Advanced Power MOSFET |
| RU40120M | N-Channel Advanced Power MOSFET |
| RU40120R | N-Channel Advanced Power MOSFET |
RU40191S Description
D G S TO263 D G Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat.