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RU40E80L - N-Channel Advanced Power MOSFET

Description

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

Features

  • 40V/80A, RDS (ON) =4.5mΩ(Typ. )@VGS=10V RDS (ON) =5.5mΩ(Typ. )@VGS=4.5V.
  • Low RDS (ON).
  • Super High Dense Cell Design.
  • ESD protected.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet preview – RU40E80L

Datasheet Details

Part number RU40E80L
Manufacturer Ruichips
File Size 314.28 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU40E80L Datasheet
Additional preview pages of the RU40E80L datasheet.

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Full PDF Text Transcription

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RU40E80L N-Channel Advanced Power MOSFET Features • 40V/80A, RDS (ON) =4.5mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=4.
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